Anomaly of dielectric properties in tens‐nanometer‐thick lead lanthanum zirconate titanate films on a platinum substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344017
Reference8 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. Ferroelectric field‐effect memory device using Bi4Ti3O12film
3. “MFS FET” -A New Type of Nonvolatile Memory Switch Using PLZT Film
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physical Characterization of Pb1Zr0.2Ti0.8 O 3 Prepared by the Sol‐Gel Process;Journal of The Electrochemical Society;1995-02-01
2. Effects of Sintering Temperature and Time on Grain Size and Dielectric Constant of Potassium Tantalum Niobate Films;Journal of the American Ceramic Society;1992-11
3. Calorimetric and analytical investigations on nonstoichiometric lead lanthanum titanates;Journal of Solid State Chemistry;1992-08
4. Characterization of potassium tantalum niobate films formed by metalorganic deposition;Journal of Applied Physics;1992-07-15
5. Spectroscopic Study on Sputtering of PLZT Thin Film;Japanese Journal of Applied Physics;1990-03-20
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