Mobility spectrum approach in the analysis of the electrical conduction of a GaAs layer grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366481
Reference20 articles.
1. Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements
2. Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements
3. Determination of electrical transport properties using a novel magnetic field‐dependent Hall technique
4. Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
5. Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intrinsic broadening of the mobility spectrum of bulk n-type GaAs;New Journal of Physics;2014-11-14
2. Analysis of electrical conduction in an n -type GaAs epilayer;Applied Physics A: Materials Science & Processing;2003-12-01
3. Application of Bryan’s algorithm to the mobility spectrum analysis of semiconductor devices;Journal of Applied Physics;2003-11-15
4. Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure;Applied Physics A Materials Science & Processing;2001-06
5. Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure;Journal of Applied Physics;1999-05
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