Time resolved photoluminescence on Cu(In, Ga)Se2 absorbers: Distinguishing degradation and trap states-Reference-Cited by-同舟云学术

Time resolved photoluminescence on Cu(In, Ga)Se2 absorbers: Distinguishing degradation and trap states

Published:2017-03-20 Issue:12 Volume:110 Page:122104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Redinger Alex¹,Levcenko Sergiu¹,Hages Charles J.¹^ORCID,Greiner Dieter²,Kaufmann Christian A.²,Unold Thomas¹

Affiliation:

1. Department Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz, D-14109 Berlin, Germany

2. Institute Competence Centre Photovoltaics Berlin (PVcomB), Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstraße 3, 12489 Berlin, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977707

Reference23 articles.

1. R. K. Ahrenkiel and M. S. Lundstrom , Minority Carriers in III–V Semiconductors: Physics and applications ( Academic Press, Inc., 1993), Vol. 39, Chap. 2, pp. 39–150.

2. Time-resolved photoluminescence studies of CdTe solar cells

3. Tailoring Impurity Distribution in Polycrystalline CdTe Solar Cells for Enhanced Minority Carrier Lifetime

4. Characterization of Cu(In,Ga)Se2thin films by time-resolved photoluminescence

5. Correlation Between Measured Minority-Carrier Lifetime and $\hbox{Cu}( \hbox{In}, \hbox{Ga})\hbox{Se}_{2}$ Device Performance

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