The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range-Reference-Cited by-同舟云学术

The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

Author:

Ziętek Sławomir¹,Ogrodnik Piotr¹²³,Skowroński Witold¹,Wiśniowski Piotr¹,Czapkiewicz Maciej¹,Stobiecki Tomasz¹,Barnaś Józef³⁴

Affiliation:

1. Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków, Poland

2. Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland

3. Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań, Poland

4. Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland

Funder

NANOSPIN

Polish National Science Center Grant

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference22 articles.

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