Influence of substrate temperature on the mobility of modulation‐doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93096
Reference11 articles.
1. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
2. Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures
3. The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
4. Two‐dimensional electron gas at differentially doped GaAs–AlxGa1−xAs heterojunction interface
5. Two-dimensional electron gas at a semiconductor-semiconductor interface
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1. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds;Semiconductors;2011-06
2. MODULATION-DOPED SEMICONDUCTORS;Synthetic Modulated Structures;1985
3. Modulation-Doped Al x Ga1−x As/GaAs Heterostructures;The Technology and Physics of Molecular Beam Epitaxy;1985
4. Modulation Doping of Semiconductor Heterostructures;Molecular Beam Epitaxy and Heterostructures;1985
5. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures;Surface Science;1983-09
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