Wavelength dependence of the indices of refraction of molecular beam epitaxy-grown ZnMgSe and ZnCdSe thin films measured by two complementary techniques-Reference-Cited by-同舟云学术

Wavelength dependence of the indices of refraction of molecular beam epitaxy-grown ZnMgSe and ZnCdSe thin films measured by two complementary techniques

Published:1999-07-15 Issue:2 Volume:86 Page:918-922
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Peiris F. C.,Lee S.,Bindley U.,Furdyna J. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370824

Reference11 articles.

1. Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

2. Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity

3. Refractive indices of ZnMgSSe alloys lattice matched to GaAs

4. Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry

5. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy

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