Improvement in perpendicular magnetic anisotropy and its voltage control efficiency in CoFeB/MgO tunnel junctions with Ta/Mo layered adhesion structures-Reference-Cited by-同舟云学术

Improvement in perpendicular magnetic anisotropy and its voltage control efficiency in CoFeB/MgO tunnel junctions with Ta/Mo layered adhesion structures

Published:2022-06-07 Issue:21 Volume:131 Page:213901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ichinose Tomohiro¹^ORCID,Yamamoto Tatsuya¹^ORCID,Uzuhashi Jun²^ORCID,Nozaki Takayuki¹^ORCID,Ohkubo Tadakatsu²^ORCID,Yakushiji Kay¹^ORCID,Tamaru Shingo¹^ORCID,Hono Kazuhiro²^ORCID,Yuasa Shinji¹^ORCID

Affiliation:

1. Research Center for Emerging Computing Technologies (RCECT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

2. National Institute for Materials Science (NIMS), Tsukuba, Japan

Abstract

By utilizing Ta/Mo layered adhesion structures, thermally robust perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy (VCMA) effects were achieved in magnetic tunnel junctions (MTJs) with ultrathin CoFeB films grown on MgO. After annealing at 400 °C, MTJs with Ta/Mo layered adhesion exhibited VCMA coefficients of 48 fJ/Vm. The combination of Ta and Mo improved the crystalline orientation and flatness of the CoFeB/MgO tunneling barrier interfaces, as determined by cross-sectional scanning transmission electron microscopy. Additionally, we demonstrate that the small interdiffusion between Mo and CoFe enables effective scavenging of B from CoFeB by increasing the thickness of the B sink layer without impairing the device performance due to atomic diffusion.

Funder

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0088530

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