Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491612
Reference12 articles.
1. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
2. InAs/GaInAs quantum dot DFB lasers emitting at 1.3 [micro sign]m
3. 3.9 W CW power from sub-monolayer quantum dot diode laser
4. High-performance 980 nm quantum dot lasers for high-power applications
5. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
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