The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires-Reference-Cited by-同舟云学术

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The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires

Published:2012-10 Issue:14 Volume:101 Page:143104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kar Ayan,Li Qiming,Upadhya Prashanth C.,Ah Seo Min,Wright Jeremy,Luk T. S.,Wang George T.,Prasankumar Rohit P.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4756915

Reference29 articles.

1. GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

2. Depletion-Mode Photoconductivity Study of Deep Levels in GaN Nanowires

3. Spatial Distribution of Defect Luminescence in GaN Nanowires

4. Luminescence properties of defects in GaN

5. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

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2. InGaN-based nanowires development for energy harvesting and conversion applications;Journal of Applied Physics;2021-03-28

3. Polarized Raman studies of single GaN nanowire and GaN/AlN hetero-nanowire structures;Thin Solid Films;2019-02

4. The shell thickness and surface passivation dependence of fluorescence decay kinetics in CdSe/ZnS core-shell and CdSe core colloidal quantum dots;Journal of Luminescence;2017-12

5. Ultrafast Carrier Capture and Auger Recombination in Single GaN/InGaN Multiple Quantum Well Nanowires;ACS Photonics;2016-11-09

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