The spin-orbital proximity effect induced spin-valley locking and Rashba splitting in heterostructure of BP/MoSe2

Author:

Zhang Shidong1ORCID,Yao Jingjing23ORCID

Affiliation:

1. Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University 1 , Guiyang 550025, People's Republic of China

2. Center for Environment and Water Resources, College of Chemistry and Chemical Engineering, Central South University 2 , Changsha 410083, People's Republic of China

3. Key Laboratory of Hunan Province for Water Environment and Agriculture Product Safety 3 , Changsha 410083, People's Republic of China

Abstract

The interlayer proximity effect induced by spin-orbital coupling between the monolayers of borophosphene (BP) and MoSe2 in the stacked heterostructure is studied by first principles calculations. The proximity effect originates from the hybridization of the d orbital of the Mo atoms and the p orbital of the B atoms. This hybridization greatly improved the strength of spin-orbital coupling of the BP layer, bringing the spin-dependent valley and spin splitting about 13 meV at the K point of the conduction band of BP layer. Moreover, the existence of BP layer destroyed the mirror symmetry of MoSe2 layer, causing the Rashba splitting at the Γ point of the valence band. In addition, the calculation results indicate that both the Zeeman splitting and Rashba splitting can be modulated by the transverse electric field and the interlayer distance.

Publisher

AIP Publishing

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