Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x)2O3 thin film with continuous composition spread
Author:
Affiliation:
1. Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany
Funder
EFRE
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919088
Reference41 articles.
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3. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
4. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
5. A continuous composition spread approach towards monolithic, wavelength-selective multichannel UV-photo-detector arrays
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