Accelerated facet degradation of InGaAsP/InP double‐heterostructure lasers in water
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331265
Reference39 articles.
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4. In1-xGaxAsyP1-y/InP DH lasers fabricated on InP
5. Influences of interfacial recombination on oscillation characteristics of InGaAsP/InP DH lasers
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-humidity-bias behavior and acceleration factors for nonhermetic uncooled InP-based lasers;Journal of Lightwave Technology;1997-05
2. Temperature-humidity-bias-behavior and acceleration model for InP planar PIN photodiodes;Journal of Lightwave Technology;1996
3. Optical strength of semiconductor laser materials;Progress in Quantum Electronics;1996-01
4. Analysis of surface-induced degradation of GaAs power MESFET's;IEEE Electron Device Letters;1985-04
5. Implementation of the Proposed Reliability Assurance Strategy for an InGaAsP/InP, Planar Mesa, Buried Heterostructure Laser Operating at 1.3 μm for Use in a Submarine Cable;AT&T Technical Journal;1985-03
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