Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure-Reference-Cited by-同舟云学术

Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

Published:2002-05 Issue:9 Volume:91 Page:6203-6205
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Huang Y. S.,Malikova L.,Pollak Fred H.,Debray J.-P.,Hoffman R.,Amtout A.,Stall R. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1467396

Reference18 articles.

1. Surface emitting semiconductor lasers

2. Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

3. Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

4. In-plane photoluminescence of vertical cavity surface-emitting laser structures

5. Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity

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