Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy-Reference-Cited by-同舟云学术

Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy

Published:2000-11-13 Issue:20 Volume:77 Page:3185-3187
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yue Guozhen,Han Daxing,Williamson D. L.,Yang Jeffrey,Lord Kenneth,Guha Subhendu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1325391

Reference9 articles.

1. Effect of hydrogen dilution on the structure of amorphous silicon alloys

2. Performance and stability of Si:H p–i–n solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary

3. Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity

4. Medium-Range Order in a-Si:H Below and Above the Onset of Microcrystallinity

5. High Quality a-Si:H Films Grown at High Deposition Rates

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