Gain broadening mechanism in various GaAlAs laser structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327513
Reference16 articles.
1. Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser
2. Saturation behavior of the optical gain in GaAs injection lasers
3. Single-mode and single-frequency injection lasers (review)
4. Broadening mechanism in semiconductor (GaAs) lasers: Limitations to single mode power emission
5. A condition of single longitudinal mode operation in injection lasers with index-guiding structure
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1. Stability and self-stabilisation of single-frequency lasing in a semiconductor laser;Quantum Electronics;2003-11-30
2. Homogeneous gain saturation in 1.5 μm InGaAsP traveling‐wave semiconductor laser amplifiers;Applied Physics Letters;1987-08-10
3. Gain measurements on semiconductor lasers by optical feedback from an external grating cavity;IEEE Journal of Quantum Electronics;1983-08
4. Longitudinal mode behavior of PbSnTe buried heterostructure lasers;Applied Physics Letters;1981-12
5. Microwave-induced oscillations in channeled substrate planar and V-groove GaAlAs lasers;Physica Status Solidi (a);1981-08-16
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