Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates-Reference-Cited by-同舟云学术

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Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates

Published:2003-05 Issue:9 Volume:93 Page:5824-5826
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pattada B.,Chen Jiayu,Manasreh M. O.,Guo S.,Gotthold D.,Pophristic M.,Peres B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1561583

Reference10 articles.

1. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

2. Phonon dispersion and Raman scattering in hexagonal GaN and AlN

3. Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces

4. Vibrational Spectroscopy of Aluminum Nitride

5. Raman Frequencies and Angular Dispersion of Polar Modes in Aluminum Nitride and Gallium Nitride

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Appendix G: Lattice Vibrations and Phonons;Introduction to Nanomaterials and Devices;2011-11-04

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