Temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials-Reference-Cited by-同舟云学术

Temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials

Published:2023-03-01 Issue:3 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Maneesai Keerati¹²³⁴^ORCID,Silakaew Kanyapak¹²³⁴^ORCID,Khammahong Sunisar¹²³⁴^ORCID,Phrompet Chaiwat²³⁴⁵,Sriwong Chaval²³⁴⁶,Thanachayanont Chanchana⁷^ORCID,Ruttanapun Chesta^ORCID

Affiliation:

1. Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang 1 , Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand

2. Smart Materials Research and Innovation Unit, School of Science, King Mongkut’s Institute of Technology Ladkrabang 2 , Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand

3. Center of Excellence in Smart Materials Research and Innovation, King Mongkut’s Institute of Technology Ladkrabang 3 , Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand

4. Thailand Center of Excellence in Physics, Ministry of Higher Education, Science, Research and Innovation 4 , 328 Si Ayutthaya Road, Bangkok 10400, Thailand

5. College of Innovation and Industrial Management, King Mongkut’s Institute of Technology Ladkrabang 5 , Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand

6. Department of Chemistry, School of Science, King Mongkut’s Institute of Technology Ladkrabang 6 , Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand

7. National Metal and Materials Technology Center 7 , 114 Thailand Science Park, Paholyothin Rd., Klong 1, Klong Luang 12120, Thailand

Abstract

The temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk-reduced graphene oxide (rGO) prepared by a chemical reduction process were investigated in a temperature range of 310–475 K. The bulk rGO contained bipolar charge carriers with p-type to n-type switching at a temperature of 420 K. The materials illustrated a p-type characteristic in the temperature range of 310–420 K and n-type characteristic in the temperature range of 420–475 K. The charge transport mechanism was that of the graphene-derived 2D material in the p-type regime and governed by polaronic charge carriers.

Funder

King Mongkut’s Institute of Technology Ladkrabang

National Research Council of Thailand

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0142476/16792278/035333_1_online.pdf

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