Evolution of self-assembled type-II ZnTe/ZnSe nanostructures: Structural and electronic properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4705385
Reference30 articles.
1. Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer
2. Raman scattering from ZnTe‐ZnSe strained‐layer superlattices
3. Properties of photoluminescence in type-II ZnTe∕ZnSe quantum dots
4. Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
5. Optical properties of self-assembled ZnTe quantum dots grown by molecular-beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancement and narrowing of the Aharonov-Bohm oscillations due to built-in electric field in stacked type-II ZnTe/ZnSe quantum dots: Spectral analysis;Physical Review B;2012-10-11
2. Publisher’s Note: “Evolution of self-assembled type-II ZnTe/ZnSe nanostructures: Structural and electronic properties” [J. Appl. Phys. 111, 093524 (2012)];Journal of Applied Physics;2012-07
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