GaInAsP/InP integrated ridge laser with a butt‐jointed transparent optical waveguide fabricated by single‐step metalorganic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346505
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5. Cathodoluminescence imaging of patterned quantum well heterostructures grown on nonplanar substrates by molecular beam epitaxy
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1. Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-01
2. Quantum-well intermixing for fabrication of lasers and photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1998
3. Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: comparison between strained and lattice-matched quantum-well structures;IEEE Journal of Selected Topics in Quantum Electronics;1998
4. Optical displacement measurement with GaAs/AlGaAs-based monolithically integrated Michelson interferometers;Journal of Lightwave Technology;1997-04
5. In situ Sputter Deposition of PbTiO3 Thin Films on Different Substrates: Influence of the Growth Temperature and the Sputtered Lead Flux on the Perovskite Phase Formation;Journal of Materials Research;1997-04
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