Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3253754
Reference16 articles.
1. Optical Properties of Strained AlGaN and GaInN on GaN
2. Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
3. InGaN MQW green LEDs using p -InGaN and p -InGaN/ p -GaN superlattices as p -type layers
4. Exposure of defects in GaN by plasma etching
5. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire
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