Spectrum of hot‐electron luminescence from high electron mobility transistors

Author:

Zappe Hans P.,As D. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. With electroluminescence microcopy towards more reliable AlGaN/GaN transistors;Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications;2015-08-28

2. AZO-Gated Al[sub 0.2]Ga[sub 0.8]As∕In[sub 0.2]Ga[sub 0.8]As High Electron Mobility Transistors;Electrochemical and Solid-State Letters;2010

3. Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs;Semiconductor Science and Technology;2001-03-27

4. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

5. Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices;Journal of Crystal Growth;2000-03

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