Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling-Reference-Cited by-同舟云学术

Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling

Published:2015-03-09 Issue:10 Volume:106 Page:103504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cappelluti F.¹,Ghione G.¹^ORCID,Russell S. A. O.²,Moran D. A. J.³,Verona C.⁴,Limiti E.⁴^ORCID

Affiliation:

1. Politecnico di Torino, DET, corso Duca degli Abruzzi 24, 10129 Torino, Italy

2. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

3. School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom

4. Università di Roma Tor Vergata, EE Dept., Via del Politecnico 1, 00133 Roma, Italy

Funder

European Space Agency (ESA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4915297

Reference24 articles.

1. High RF output power for H-terminated diamond FETs

2. High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

3. Origin of Surface Conductivity in Diamond

4. Surface transfer doping of semiconductors

5. Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study

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