Isomers of GeNO and Ge(NO)2: Production and infrared absorption of GeNO and ONGeNO in solid Ar
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1994851
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1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Theoretical study of the three isomers of the SiNO radical
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5. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
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4. Infrared absorption of GeNNO isolated in solid Ar;The Journal of Chemical Physics;2009-10-14
5. Electronic states and stability of GeC2N radical;Chemical Physics Letters;2007-04
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