Effect of oxygen on minority‐carrier lifetime and recombination currents in Si1−xGexheterostructure devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104296
Reference8 articles.
1. Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing
2. Limited reaction processing: Growth of Si1−xGex/Si for heterojunction bipolar transistor applications
3. Minority‐carrier properties of thin epitaxial silicon films fabricated by limited reaction processing
4. Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing
5. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
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1. Modeling and simulations of Si1-x Gex based solar cells;Silicon-Germanium Alloys for Photovoltaic Applications;2023
2. Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells;AIP Advances;2013-05
3. Modelling of Strained Silicon-Germanium Material Parameters for Device Simulation;IETE Journal of Research;2007-05
4. Vacuum science considerations for rapid reactor recovery with extremely low oxygen in low temperature low pressure chemical vapor deposition of Si1−xGex and Si1−x−yGexCy films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-05
5. Polycrystalline Si1-xGex thin film deposition by rapid thermal chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2006-01
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