Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements-Reference-Cited by-同舟云学术

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Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

Published:2021-02-01 Issue:2 Volume:92 Page:023910
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Lee Sanghyun¹²^ORCID,Hashisaka Masayuki¹³^ORCID,Akiho Takafumi¹,Kobayashi Kensuke²^ORCID,Muraki Koji¹^ORCID

Affiliation:

1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

2. Graduate School of Science, Osaka University, 1-1, Machikaneyama, Toyonaka, Osaka 560-0043, Japan

3. JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

Funder

Japan Society for the Promotion of Science

Precursory Research for Embryonic Science and Technology

Publisher

AIP Publishing

Subject

Instrumentation

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0036419

Reference36 articles.

1. Solid-state shot noise

2. Shot noise in mesoscopic conductors

3. Observation of thee/3Fractionally Charged Laughlin Quasiparticle

4. Direct observation of a fractional charge

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Entanglement entropy of the maximum geminal of the BCS ground state;Journal of Physics Communications;2024-04-01

2. Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase;Physical Review X;2023-09-07

3. Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier;Applied Physics Letters;2022-10-31

4. Homemade-HEMT-based transimpedance amplifier for high-resolution shot-noise measurements;Review of Scientific Instruments;2021-12-01

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