Large photovoltaic response in rare-earth doped BiFeO3 polycrystalline thin films near morphotropic phase boundary composition
Author:
Affiliation:
1. Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5090911
Reference44 articles.
1. An introduction to solar cell technology
2. Surface Space-Charge Layers in Barium Titanate
3. High‐voltage bulk photovoltaic effect and the photorefractive process in LiNbO3
4. Bulk photovoltaic effect in BaTiO3
5. Enlarging photovoltaic effect: combination of classic photoelectric and ferroelectric photovoltaic effects
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced ferroelectric and improved leakage of BFO-based thin films through increasing entropy strategy;International Journal of Minerals, Metallurgy and Materials;2024-08-30
2. Outstanding ferroelectric properties in the narrow bandgap cobalt-substituted BiFeO3 spin-coated films;Journal of Sol-Gel Science and Technology;2024-07-29
3. Highly stable photovoltaic effects in A2+–Zr4+ (A = Ca, Sr, Ba) co-doped BiFeO3 films with self-polarization;Journal of Materials Chemistry A;2024
4. Synergistic effects of constituents in rare earth-based composites: Enhanced structural, electrical and magnetic properties for water splitting applications;Journal of Rare Earths;2024-01
5. Exploration, Prediction, and Experimental Verification of Structure and Optoelectronic Properties in I2-Eu-IV-X4 (I = Li, Cu, Ag; IV = Si, Ge, Sn; X = S, Se) Chalcogenide Semiconductors;Chemistry of Materials;2023-12-18
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3