Self-oscillation up to 9 MHz based on voltage triggered switching in VO2/TiN point contact junctions
Author:
Affiliation:
1. Graduate School of Science and Technology, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
2. GREMAN, UMR 7347 CNRS, Université François Rabelais de Tours, Parc de Grandmont, 37200 Tours, France
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922122
Reference30 articles.
1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
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5. Time-dependent Characteristics of Electric Field-induced Metal–Insulator Transition of Planer VO2/c-Al2O3Structure
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