Characterizing the electrical breakdown properties of single n-i-n-n+:GaN nanowires-Reference-Cited by-同舟云学术

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Characterizing the electrical breakdown properties of single n-i-n-n+:GaN nanowires

Published:2018-11-05 Issue:19 Volume:113 Page:193103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Qu Juntian¹²^ORCID,Wang Renjie³^ORCID,Sun Yu¹,Shih Ishiang³,Mi Zetian³⁴^ORCID,Liu Xinyu¹²^ORCID

Affiliation:

1. Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Ontario M5S 3G8, Canada

2. Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0C3, Canada

3. Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada

4. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Canada Research Chairs

Natural Sciences and Engineering Research Council of Canada

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050511

Reference32 articles.

1. Gallium Nitride Nanowire Nanodevices

2. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

3. Enhanced voltage-current characteristics of GaN nanowires treated by a selective reactive ion etching

4. Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires

5. Electrical Breakdown of Nanowires

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1. An SEM-Based Nanomanipulation System for Multiphysical Characterization of Single InGaN/GaN Nanowires;IEEE Transactions on Automation Science and Engineering;2023-01

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3. Ultralong Single-Crystal α-Bi4Br4 Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation;The Journal of Physical Chemistry C;2021-10-01

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