SiV center electroluminescence in high current density diamond p-i-n diode

Abstract

The study of the electroluminescence of silicon vacancy color centers (SiV centers) in the diamond p-i-n diode at high current density of 500 A/cm2 is presented. To create color centers, the internal region of the diode was doped with silicon. In the electroluminescence spectrum, the bright emission line at 738 nm corresponding to the SiV color center in a negative charge state was observed. Such bright emission is due to high current density. Additionally, the 946 nm line corresponding to the emission of the color center in a neutral charge state was observed in electroluminescence. Nanosecond voltage pulses were applied to study electroluminescence in a pulsed regime. Short emission pulses at 738 nm were demonstrated, showing the potential of creating electrically driven single photon source with “photon on demand” capability. By comparing the intensities of photoluminescence and electroluminescence, the possibility of obtaining single photon emission rate in a diode exceeding 106 photon/s is shown.