Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1312258
Reference13 articles.
1. Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
2. Suppressed diffusion of boron and carbon in carbon-rich silicon
3. Carbon-induced undersaturation of silicon self-interstitials
4. The contribution of vacancies to carbon out-diffusion in silicon
5. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
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2. Silicon-Carbon Source and Drain Stressors: Carbon Profile Design by Ion Implantation;Journal of The Electrochemical Society;2012
3. The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors;IEEE Transactions on Electron Devices;2009-11
4. In situ arsenic-doped Si1−yCy selective epitaxial growth under atmospheric pressure;Applied Physics Letters;2008-01-28
5. Interactions of Carbon Atoms and Dimer Vacancies on the Si(001) Surface;Journal of Engineering Materials and Technology;2005
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