Investigation of temperature and illumination dependencies of carrier-induced degradation in p-type multi-crystalline silicon-Reference-Cited by-同舟云学术

Investigation of temperature and illumination dependencies of carrier-induced degradation in p-type multi-crystalline silicon

Published:2018 Issue: Volume: Page:
ISSN:0094-243X
Container-title:AIP Conference Proceedings
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Author:

Liu Shaoyang,Chan Catherine,Chen Daniel,Kim Moonyong,Sen Chandany,Varshney Utkarshaa,Hallam Brett,Abbott Malcolm,Wenham Stuart,Payne David

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Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049333

Reference22 articles.

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2. Rapid passivation of carrier-induced defects in p-type multi-crystalline silicon

3. K. Petter, K. Hubener, F. Kersten, M. Bartzsch, F. Fertig, B. Kloter, and J. Muller, 9th Int. Work. Cryst. Silicon Sol. Cells 6, 1 (2016).

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5. J. Schmidt, A. Aberle, and R. Hezel, Spec. Conf. 1997, (n.d.).

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