Iron and manganese-related magnetic centers in hexagonal silicon carbide: A possible roadmap for spintronic devices-Reference-Cited by-同舟云学术

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Iron and manganese-related magnetic centers in hexagonal silicon carbide: A possible roadmap for spintronic devices

Published:2015-07-28 Issue:4 Volume:118 Page:045704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Machado W. V. M.¹,Justo J. F.²,Assali L. V. C.¹

Affiliation:

1. Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, Brazil

2. Escola Politécnica, Universidade de São Paulo, CP 61548, CEP 05424-970, São Paulo, Brazil

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico (National Council for Scientific and Technological Development)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927293

Reference34 articles.

1. A ten-year perspective on dilute magnetic semiconductors and oxides

2. First-principles theory of dilute magnetic semiconductors

3. Dilute ferromagnetic semiconductors: Physics and spintronic structures

4. Electronic structure and exchange coupling of Mn impurities in III–V semiconductors

5. Theory of ferromagnetic (III,Mn)V semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurities and defects in 4H silicon carbide;Applied Physics Letters;2023-05-01

2. Lattice location of implanted transition metals in 3C–SiC;Journal of Physics D: Applied Physics;2017-05-03

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