Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors-Reference-Cited by-同舟云学术

Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors

Published:2015-07-24 Issue:4 Volume:118 Page:045709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Kanevce Ana¹,Kuciauskas Darius¹^ORCID,Levi Dean H.¹,Allende Motz Alyssa M.¹²^ORCID,Johnston Steven W.¹^ORCID

Affiliation:

1. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

2. Colorado School of Mines, Golden, Colorado 80401, USA

Funder

U.S. Department of Energy (Department of Energy)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4927299

Reference30 articles.

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2. Measurement of minority-carrier lifetime by time-resolved photoluminescence

3. R. K. Ahrenkiel , “ Minority-carrier lifetime in III-V semiconductors,” in Semiconductors and Semimetals, edited by R. K. Ahrenkiel and M. S. Lundstrom ( Academic Press, 1993), Vol. 39.

4. Time-resolved photoluminescence studies of CdTe solar cells

5. Summary Abstract: Nondestructive analysis of native oxides and interfaces on Hg1−xCdxTe

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