Fast photoelectrochemical etching of quarter‐micrometer diffraction gratings inn‐InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341495
Reference19 articles.
1. Integrated optics components and devices using periodic structures
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3. V‐groove distributed feedback laser for 1.3–1.55 μm operation
4. Characterization of n‐Type Semiconducting Indium Phosphide Photoelectrodes: Stabilization to Photoanodic Dissolution in Aqueous Solutions of Telluride and Ditelluride Ions
5. The Photoelectrochemical Oxidation of (100), (111), and (1̅1̅1̅) n ‐ InP and n ‐ GaAs
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1. Photoelectrochemical Etching;Encyclopedia of Electrochemistry;2002-01-29
2. Photodissolution of n-GaAs electrodes under laser illumination: control of the etching profile;Semiconductor Science and Technology;2001-03-14
3. Photoelectrochemical etching of semiconductors;IBM Journal of Research and Development;1998-09
4. Fringe stabilization and depth monitoring during the holographic photoelectrochemical etching of n-InP (100) substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
5. The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs;Applied Physics Letters;1995-08-28
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