Modeling the spectral shape of InGaAlP-based red light-emitting diodes-Reference-Cited by-同舟云学术

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Modeling the spectral shape of InGaAlP-based red light-emitting diodes

Published:2015-11-28 Issue:20 Volume:118 Page:203103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Vaskuri Anna¹,Baumgartner Hans¹²,Kärhä Petri¹,Andor György³,Ikonen Erkki¹²

Affiliation:

1. Metrology Research Institute, Aalto University, P.O. Box 13000, 00076 Aalto, Finland

2. MIKES Metrology, VTT Technical Research Centre of Finland Ltd., P.O. Box 1000, 02044 VTT, Finland

3. Hungarian Trade Licensing Office, P.O. Box 919, 1534 Budapest, Hungary

Funder

European Metrology Research Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936322

Reference21 articles.

1. Measurement of the junction temperature in high-power light-emitting diodes from the high-energy wing of the electroluminescence band

2. Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis

3. Modeling high power light-emitting diode spectra and their variation with junction temperature

4. Spectral shape and broadening of emission from AlGaInP light-emitting diodes

5. Understanding Modern Transistors and Diodes

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