Hybrid integrated GaSb/Si3N4 narrow linewidth (<50 kHz) distributed Bragg reflector laser

Abstract

A narrow linewidth hybrid integrated distributed Bragg reflector (DBR) laser platform operating at 2 μm wavelength region is demonstrated. The laser architecture comprises AlGaInAsSb/GaSb type-I quantum well reflective semiconductor optical amplifiers butt-coupled to a Si3N4 photonic integrated circuit (PIC), incorporating a narrow-band DBR. The DBR is realized with a long spiral-shaped waveguide structure with periodic circular posts placed adjacent to the waveguide. At room temperature operating conditions, the laser exhibits a maximum continuous wave output power of more than 17 mW for emission near 2 μm. Linewidth properties are analyzed with a heterodyne measurement technique, involving the mixing of the laser signal with a frequency comb phase-locked to an ultra-stable laser. The hybrid laser exhibits a narrow linewidth of ∼8 kHz in 1 ms timescale and ∼50 kHz in 10 ms timescale.