Multifield driven bond relaxation on the dielectric constant of GaN, InN, and ZnO

Abstract

From the perspective of bond relaxation under multifield perturbation, we examined the dielectric response to perturbation for GaN, InN, and ZnO. It is found that the surface local bond contraction and quantum entrapment dictate the size dependency of the dielectric constant at the nanometer scale. Reproduction of experimental observations under temperature, pressure, and tensile strain derived respective information of the Debye temperature and atomic cohesive energy, the bulk modulus and energy density, the bond length, bond energy, and force constant. The formulation of the multifield effects on the dielectric constant of semiconductors is beyond the scope of the available approaches, which not only revealed quantitative information but also provides deeper insight into the physical origin of the dielectric response to perturbations.