Oxidation of silicon nitride prepared by plasma‐enhanced chemical vapor deposition at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112772
Reference10 articles.
1. Effects of Si3N4, SiO, and polyimide surface passivations on GaAs MESFET amplifier RF stability
2. First life-test results on planar p-i-n InGaAs/InP photodiodes passivated with SiO2or SiNx+SiO2or SiNxlayers
3. Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation
4. Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 Mixture
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