Spin–orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayer
Author:
Affiliation:
1. Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
2. Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan
Funder
Japan Society for the Promotion of Science
Center for Spintronics Research Network, Tohoku University
Hitachi Metals-Materials Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0032732
Reference39 articles.
1. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer
2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
3. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction
4. Epitaxial Mn2.5Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices
5. Mn3Ga, a compensated ferrimagnet with high Curie temperature and low magnetic moment for spin torque transfer applications
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1. Ultrafast laser-induced precession dynamics in perpendicular artificial ferrimagnetic [D022-Mn3Ga/Co2MnSi]5 superlattices;Applied Physics Letters;2023-10-02
2. Effect of an ultrathin Fe interlayer on the growth of MnGa and spin-orbit-torque induced magnetization switching;Applied Physics Express;2023-06-01
3. Spin-orbit torque induced magnetization switching in perpendicularly magnetized MnGa/Fe bilayer grown on GaAs;2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers);2023-05
4. Deterministic field-free switching of perpendicular magnetization by spin–orbit torques originating from in-plane magnetized Co2MnAl;AIP Advances;2023-01-01
5. Epitaxy of half-metallic Heusler alloy Co2MnSi on Ge(111) substrate via a graphene interlayer with L21-ordered Co2MnSi;Applied Physics Letters;2022-04-18
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