Passivation of deep electronic states of partial dislocations in GaAs: A theoretical study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3364140
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1. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
2. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
3. Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries
4. Electrically Benign Behavior of Grain Boundaries in PolycrystallineCuInSe2Films
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