Local structure analysis of Sb, Bi, and Ag dopant atoms in Mg2Si semiconductor by x-ray absorption spectroscopy and first-principles calculation

Author:

Kitaura Mamoru1ORCID,Wantanabe Shinta2ORCID,Ina Toshiaki3,Imai Motoharu4ORCID,Udono Haruhiko5ORCID,Ishizaki Manabu1ORCID,Yamane Hisanori6ORCID,Tanimoto Taku1ORCID,Ohnishi Akimasa1

Affiliation:

1. Faculty of Science, Yamagata University, Yamagata 990-8560, Japan

2. Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8550, Japan

3. Japan Synchrotron Radiation Research Institute, SPring-8, Sayo-cho 679-5198, Japan

4. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan

5. Department of Electrical and Electronic System Engineering, Ibaraki University, Hitachi 316-8511, Japan

6. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

Funder

Network Joint Research Center for Materials and Devices

Research Center for Biomedical Engineering

JSPS KAKENHI Grant

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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