Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3700806
Reference17 articles.
1. Electric-pulse-induced reversible resistance change effect in magnetoresistive films
2. Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides
3. The switching location of a bipolar memristor: chemical, thermal and structural mapping
4. Direct Identification of the Conducting Channels in a Functioning Memristive Device
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2. Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment;Nanotechnology;2018-04-13
3. Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-δ;Applied Physics Letters;2017-06-12
4. Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates;Japanese Journal of Applied Physics;2016-07-11
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