Determination of densities and energy levels of donors in free-standing undoped 3C–SiC epilayers with thicknesses of 80μm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1814805
Reference40 articles.
1. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
2. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
3. Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face
4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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