Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3284084
Reference21 articles.
1. Towards a universal memory?
2. Low-cost and nanoscale non-volatile memory concept for future silicon chips
3. Understanding the phase-change mechanism of rewritable optical media
4. Structure of laser-crystallized Ge2Sb2+xTe5 sputtered thin films for use in optical memory
5. Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2∕Si substrates by sputtering method
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