Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4803164
Reference18 articles.
1. Currents Induced by Electron Motion
2. Currents to Conductors Induced by a Moving Point Charge
3. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
4. Nanometer CMOS
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1. Displacement Damage, Total Ionizing Dose, and Transient Ionization Effects in Gate-All-Around Field Effect Transistors;ACS Applied Electronic Materials;2024-07-17
2. Limitations of the Intrinsic Cutoff Frequency to Correctly Quantify the Speed of Nanoscale Transistors;IEEE Transactions on Electron Devices;2017-06
3. The relationship of the field effect transistor geometry and its cutoff frequency;Proceedings of the 2nd International Conference on Computing and Wireless Communication Systems - ICCWCS'17;2017
4. Electron Devices Simulation with Bohmian Trajectories;Simulation of Transport in Nanodevices;2016-11-26
5. Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms;Fluctuation and Noise Letters;2016-09
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