High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement-Reference-Cited by-同舟云学术

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Published:2015-01-12 Issue:2 Volume:106 Page:021112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Wei¹,Xu Jin¹,Ye Wei¹,Li Yang¹,Qi Zhiqiang¹,Dai Jiangnan¹,Wu Zhihao¹,Chen Changqing¹,Yin Jun²,Li Jing²,Jiang Hao³,Fang Yanyan¹

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

2. Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China

3. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Funder

national basic research program of china

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Hubei Province (Hubei Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905929

Reference21 articles.

1. (Al,In,Ga)N-based photodetectors. Some materials issues

2. Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

3. Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

4. AlGaN-based high-performance metal–semiconductor–metal photodetectors

5. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

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