Presence of a chiral soliton lattice in the chiral helimagnet MnTa3S6-Reference-Cited by-同舟云学术

Presence of a chiral soliton lattice in the chiral helimagnet MnTa3S6

Published:2023-10-01 Issue:10 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Miyagi Y.¹,Jiang J.¹^ORCID,Ohishi K.²^ORCID,Kawamura Y.²^ORCID,Suzuki J.²,Alshalawi D. R.²³⁴^ORCID,Campo J.⁵^ORCID,Kousaka Y.¹^ORCID,Togawa Y.¹^ORCID

Affiliation:

1. Department of Physics and Electronics, Osaka Metropolitan University 1 , Sakai, Osaka 599-8531, Japan

2. Neutron Science and Technology Center, Comprehensive Research Organization for Science and Society (CROSS) 2 , Tokai, Ibaraki 319-1106, Japan

3. Institute of Applied Magnetism, UCM-ADIF-CSIC 3 , Las Rozas 28230, Spain

4. Department of Materials Physics, Complutense University of Madrid 4 , Madrid 28040, Spain

5. Aragón Nanoscience and Materials Institute (CSIC - University of Zaragoza) and Condensed Matter Physics Department 5 , C/Pedro Cerbuna 12, 50009 Zaragoza, Spain

Abstract

Chiral helimagnetism was investigated in transition-metal intercalated dichalcogenide single crystals of MnTa3S6. Small-angle neutron scattering (SANS) experiments revealed the presence of harmonic chiral helimagnetic order, which was successfully detected as a pair of satellite peaks in the SANS pattern. The magnetization data are also supportive of the presence of chiral soliton lattice (CSL) phase in MnTa3S6. The observed features are summarized in the phase diagram of MnTa3S6, which is in strong contrast with that observed in other dichalcogenides such as CrNb3S6 and CrTa3S6. The presence of the remanent state provides tunable capability of the number of chiral solitons at zero magnetic field in the CSL system, which may be useful for memory device applications.

Funder

Japan Society for the Promotion of Science

MCIN/AEI

CSIC/MCIN

Diputación General de Aragón

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0171790/18152652/101105_1_5.0171790.pdf

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