Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires-Reference-Cited by-同舟云学术

Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires

Published:2018-07-07 Issue:1 Volume:124 Page:015702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Priante Davide¹^ORCID,Elafandy Rami T.¹,Prabaswara Aditya¹,Janjua Bilal¹,Zhao Chao¹,Alias Mohd Sharizal¹^ORCID,Tangi Malleswararao¹^ORCID,Alaskar Yazeed²,Albadri Abdulrahman M.²,Alyamani Ahmed Y.²^ORCID,Ng Tien Khee¹^ORCID,Ooi Boon S.¹

Affiliation:

1. King Abdullah University of Science and Technology (KAUST), Photonics Laboratory, Thuwal 23955-6900, Saudi Arabia

2. National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086, Saudi Arabia

Funder

King Abdullah University of Science and Technology

King Abdulaziz City for Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026650

Reference33 articles.

1. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

2. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

3. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

4. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

5. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes

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