Noise in 6H-SiC ion implanted p–n diodes: Effect of the active area on the noise properties of these junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370161
Reference24 articles.
1. Noise analysis of silicon carbide JFETs
2. Nature of the volume 1/fnoise in the main materials of semiconductor electronics: Si, GaAs, and SiC
3. Electron localization and noise in silicon carbide inversion layers
4. Experimental studies on 1/f noise
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Generation-recombination noise in forward-biased 4H-SiC p-n diode;SPIE Proceedings;2007-06-07
2. Generation-recombination noise in forward biased 4H‐SiC p‐n diodes;Journal of Applied Physics;2006-09-15
3. Comparison between the noise properties of PtSi/p-Si1-xGexand Pt/p-Si1-xGexSchottky contacts prepared by co-sputtering and thermal reaction;Semiconductor Science and Technology;2001-03-14
4. Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1−xGex Schottky contacts;Journal of Applied Physics;2000-04-15
5. Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si/sub 1-x/Ge/sub x/;2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479)
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