Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1927695
Reference11 articles.
1. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
2. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
3. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
4. AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers
5. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
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